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AMD Mobile Serial VID Dual-Phase
Fixed-Frequency Controller
ABSOLUTE MAXIMUM RATINGS
V DD1, V DD2, V CC , V DDIO to GND_............................-0.3V to +6V
PWRGD to GND_......................................................-0.3V to +6V
FBDC_, FBAC_, PRO to GND_ ...................-0.3V to (V CC + 0.3V)
GNDS2, THRM, VRHOT to GND_.............................-0.3V to +6V
CSP_, CSN_, ILIM to GND_......................................-0.3V to +6V
SVC, SVD, PGD_IN to GND_....................................-0.3V to +6V
NBV_BUF, NBSKP to GND_ .......................-0.3V to (V CC + 0.3V)
REF, OSC, TIME, OPTION to GND_ ..........-0.3V to (V CC + 0.3V)
BST1, BST2 to GND_..............................................-0.3V to +36V
BST1 to V DD1 ..........................................................-0.3V to +30V
BST2 to V DD2 ..........................................................-0.3V to +30V
LX1 to BST1..............................................................-6V to +0.3V
DH1 to LX1 .............................................-0.3V to (V BST1 + 0.3V)
DH2 to LX2 .............................................-0.3V to (V BST2 + 0.3V)
DL1 to GND_.............................................-0.3V to (V DD1 + 0.3V)
DL2 to GND_.............................................-0.3V to (V DD2 + 0.3V)
GNDS1, GNDS_NB to GND_.................................-0.3V to +0.3V
Continuous Power Dissipation (T A = +70°C)
Multilayer PCB (derate 35.7mW/°C above +70°C) .....2857mW
Single-Layer PCB (derate 22.2mW/°C above +70°C)..1778mW
Operating Temperature Range .........................-40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
LX2 to BST2..............................................................-6V to +0.3V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 2, V IN = 12V, V CC = V DD1 = V DD2 = SHDN = PGD_IN = 5V, V DDIO = 1.8V, PRO = OPTION = GNDS_NB = GNDS_ =
GND_, FBDC_ = FBAC_ = CSP_ = CSN_ = 1.2V, all DAC codes set to the 1.2V code, T A = 0°C to +85°C , unless otherwise noted.
Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
INPUT SUPPLIES
V IN
Drain of external high-side MOSFET
4
26
Input Voltage Range
V BIAS
V CC , V DD1 , V DD2
4.5
5.5
V
V DDIO
1.0
2.7
V CC Undervoltage-Lockout
Threshold
V CC Power-On Reset
Threshold
V DDIO Undervoltage-Lockout
Threshold
Quiescent Supply Current (V CC )
Quiescent Supply Currents
(V DD1 , V DD2 )
V UVLO
V CC
I CC
I DD1 , I DD2
V CC rising 50mV typical hysteresis
Falling edge, typical hysteresis = 1.1V,
faults cleared and DL_ forced high when
V CC falls below this level
V DDIO rising 100mV typical hysteresis
Skip mode, FBDC_ forced above their
regulation points
Skip mode, FBDC_ forced above their
regulation points
4.10
0.7
4.25
1.8
0.8
5
0.01
4.45
0.9
10
1
V
V
V
mA
μA
Quiescent Supply Current (V DDIO )
Shutdown Supply Current (V CC )
Shutdown Supply Currents
(V DD1 , V DD2 )
Shutdown Supply Current (V DDIO )
I DDIO
SHDN = GND
SHDN = GND
SHDN = GND
10
0.01
0.01
0.01
25
1
1
1
μA
μA
μA
μA
Reference Voltage
Reference Load Regulation
V REF
V CC = 4.5V to 5.5V, no REF load
Sourcing: I REF = 0 to 500μA
Sinking: I REF = 0 to -100μA
1.986
-2
2.000
-0.2
0.21
2.014
6.2
V
mV
REF Fault Lockout Voltage
Typical hysteresis = 85mV
1.84
V
2
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